Designed for use as an LNA in TDMA handsets and other L and S Band receiver designs, the NE52118 miniature GaAs heterojunction bipolar FET delivers low noise and high gain performance of 1.0 dB at 2 GHz and 15 dB at 2GHz. Like silicon transistors, the chips only need a single power supply. Housed in firm's super mini-mold 4-pin "18" package, the devices are priced at $0.68 each/100,000.
Company: CALIFORNIA EASTERN LABORATORIES
Product URL: Click here for more information