Precision MOSFET Arrays Matched To Within 1-mV Offset

April 26, 2004

When used in precision current mirror or current multiplier applications, the n-channel ALD1121E (dual) and ALD1123E (quad) precision MOSFET arrays can provide a current source from 100 nA to 3 mA and either positive, negative, or zero temperature-coefficient matching characteristics. The arrays are matched to within an offset voltage of 1 mV.

The arrays are manufactured on Advanced Linear Devices' (ALD) e-trim process, which ensures tight matching and tracking of on-resistance, threshold voltage, and turn-on current operating characteristics. They also feature a very high typical input impedance of 10¹² Ω.

Power-supply requirements range from 1.2 V to 10 V. Though not required, users can e-trim both devices as an active in-circuit element via user-designed interface circuitry and an ALD Electrically Program-mable Analog Device (EPAD) programming module.

The dual ALD1121E, which has two separate source pins, comes in an eight-pin plastic dual-inline package or small-outline IC package. The quad ALD1123E offers four separate source pins and maintains a 16-pin footprint. The standard operating temperate ranges from 0°C to 70°C. Optional industrial and military operating-temperature ranges are available in various ceramic packages.

Pricing for the MOSFET pairs in the standard operating-temperature range goes from $0.75 to $1.24 each in 1000-piece quantities. Prototype and small-volume quantities are currently in stock.

Advanced Linear Devices Inc. www.aldinc.com
(408) 747-1155

See associated figure.

About the Author

Roger Allan

Roger Allan is an electronics journalism veteran, and served as Electronic Design's Executive Editor for 15 of those years. He has covered just about every technology beat from semiconductors, components, packaging and power devices, to communications, test and measurement, automotive electronics, robotics, medical electronics, military electronics, robotics, and industrial electronics. His specialties include MEMS and nanoelectronics technologies. He is a contributor to the McGraw Hill Annual Encyclopedia of Science and Technology. He is also a Life Senior Member of the IEEE and holds a BSEE from New York University's School of Engineering and Science. Roger has worked for major electronics magazines besides Electronic Design, including the IEEE Spectrum, Electronics, EDN, Electronic Products, and the British New Scientist. He also has working experience in the electronics industry as a design engineer in filters, power supplies and control systems.

After his retirement from Electronic Design Magazine, He has been extensively contributing articles for Penton’s Electronic Design, Power Electronics Technology, Energy Efficiency and Technology (EE&T) and Microwaves RF Magazine, covering all of the aforementioned electronics segments as well as energy efficiency, harvesting and related technologies. He has also contributed articles to other electronics technology magazines worldwide.

He is a “jack of all trades and a master in leading-edge technologies” like MEMS, nanolectronics, autonomous vehicles, artificial intelligence, military electronics, biometrics, implantable medical devices, and energy harvesting and related technologies.