• Resources
  • Directory
  • Webinars
  • CAD Models
  • Video
  • Blogs
  • Advertise
    1. Technologies
    2. Power

    Low RDS(on) N-Channel FET Resides In SO-8 Packages

    Feb. 1, 1999
    Portable products, including notebook computers, dc-to-dc converters and smart batteries, are the application arena for a new N-channel MOSFET housed in a SO-8 package. Designed as a drop-in replacement for competing Siliconix parts, Si4410DY power

    1 of Enlarge image

    Portable products, including notebook computers, dc-to-dc converters and smart batteries, are the application arena for a new N-channel MOSFET housed in a SO-8 package. Designed as a drop-in replacement for competing Siliconix parts, Si4410DY power FET has an on-resistance of 13.5 milliohms at VGS of 10V and a BVDSS of 30V.

    Company: INTERNATIONAL RECTIFIER CORP. (IR)

    Product URL: Click here for more information

    About the Author

    Staff

    Articles, galleries, and recent work by members of Electronic Design's editorial staff.

    Sponsored Recommendations

    Comments

    To join the conversation, and become an exclusive member of Electronic Design, create an account today!


    Sponsored