1200V, High-Current IGBT Modules Offer Three Topologies

A dual IGBT half-bridge (MII models), a boost configuration (MID models), and a buck configuration (MDI models) are the topologies available in a series of 1200V, high-current IGBT modules. Current ratings range from 75A to 300A per IGBT at T_C = 25°C with the ultra-fast companion FRED diode having an equal current rating. Each module is suited for PWM operation up to 30 kHz, thanks to its low V_CE(SAT) of 2.7V at rated current and a 100-ns current fall time.A key feature of the modules' Direct Copper Bond (DCB) construction is that the IGBT and FRED diode chips are soldered directly to the DCB substrate without any intermediate layers. The result is a minimizing of mechanical stresses, high power dissipation, and excellent power and temperature cycling capabilities and reliability.