DPAK Power MOSFETs Cover Automotive Applications

Sept. 1, 1998
A pair of TrenchFET DPAK power MOSFETs are available for 4.5V logic-level operation. Offering a 60V breakdown rating (drain to source) required for unprotected circuits in the automotive environment, the n-channel SUD15N06-90L and p-channel

A pair of TrenchFET DPAK power MOSFETs are available for 4.5V logic-level operation. Offering a 60V breakdown rating (drain to source) required for unprotected circuits in the automotive environment, the n-channel SUD15N06-90L and p-channel SUD10P06-280L FETs are both rated for a 175°C max. junction temperature.Typical applications for the power MOSFETs include fuel injector drivers, solenoid drivers in anti-skid braking systems, oxygen sensor heaters, and body/vehicle control. On-resistance at a gate drive of 4.5V is 90 milliohms for the n-channel device and 280 milliohms for the p-channel part.Samples and production quantities of both devices are available now with lead times of eight to 10 weeks for larger orders.

Company: VISHAY SILICONIX

Product URL: Click here for more information

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!