P-Channel MOSFETs Drop On-Resistance

July 1, 1999
Reductions in on-resistance of up to 72% over earlier devices are featured in a series of five new p-channel MOSFETs with ratings of -12V to -20V. Devices are offered in single and dual configurations in three different SMT packages including the

Reductions in on-resistance of up to 72% over earlier devices are featured in a series of five new p-channel MOSFETs with ratings of -12V to -20V. Devices are offered in single and dual configurations in three different SMT packages including the Micro6, Micro8 and SO-8 outlines.The two new Micro8 products are said to set benchmarks in RDS(ON) performance and provide an excellent performance vs. space tradeoff when compared with TSSOP-8 packages. Similarly, the Micro6 device (IRLMS6802), has the equivalent footprint to a TSOP-6 and offers an RDS(ON) of just 50 milliohms.

Company: INTERNATIONAL RECTIFIER CORP. (IR)

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