Power MOSFETs Achieve Ultra-Low Power Dissipation

Sept. 1, 1999
By using an enhanced version of the firm’s TrenchMOS process technology, the SiliconMAX MOSFETs offer designers the power dissipation and switching-speed advantages of TrenchMOS while reducing the switching losses by as much as half that of

By using an enhanced version of the firm’s TrenchMOS process technology, the SiliconMAX MOSFETs offer designers the power dissipation and switching-speed advantages of TrenchMOS while reducing the switching losses by as much as half that of existing 25V to 200V DMOS power MOSFETs. The devices are suited for products requiring a low RDS(ON), including dc-to-dc converters and load-switching tasks.The power FETs offer a lower RDS(ON) rating in the same-sized package or allow for use of a smaller device with the same rating. The 100V SiliconMAX device in a TO-220 package achieves a 15-milliohms maximum RDS(ON) figure.

Company: PHILIPS SEMICONDUCTORS INC.

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