MESFET Targets Oscillator & Amp Tasks

Both high output power and low phase noise make the NE72218 well-suited for oscillator and amplifier applications at frequencies through the X band. The chip features a 0.8-µm recessed gate, triple expitaxial technology and is fabricated using ion implementation for improved RF and dc performance. Output power is 15 dBm at 12 GHz with phase noise of -90 dBc/Hz at 10-kHz offset. The chip is housed in an ultra-miniature plastic surface-mount SOT-343 package.