P-Channel MOSFET Offers Low RDS(ON)

Dec. 1, 1999
Ultra-low on-resistance makes the MMSF4205 P-channel power MOSFET suitable for digital GSM cell phone designs. The device is fabricated on the firmís high cell-density HDTMOS planar process for low gate capacities for faster switching time for

Ultra-low on-resistance makes the MMSF4205 P-channel power MOSFET suitable for digital GSM cell phone designs. The device is fabricated on the firmís high cell-density HDTMOS planar process for low gate capacities for faster switching time for any given capacitance load. It's designed for use in low-voltage, high-speed switching where power efficiency is critical. Typical applications include PA and battery disconnect switches, dc-dc converters and power management in portable and battery powered systems.

Company: ON SEMICONDUCTOR

Product URL: Click here for more information

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