GaAs HJ FET Targets Handset & Base Station Apps

Designed for use in L- and S-Band transmitter, base station and mobile communications handset applications, the NE651R479A GaAs heterojunction (HJ) FET can be used as a driver for NEC's NE6510179A GaAs HJ FET and NE6500379A GaAs MESFET or as an output device for medium power applications. The new power GaAs HJ FET is said to be capable of delivering 0.4W of output power (CW) with high linear gain, high power added efficiency, and excellent linearity.
At 1.9 GHz, the medium-power NE651R479A HJ FET driver features a P_OUT of 27 dBm (typical), a G_L of 12 dB, and a power added efficiency of 60% at V_DS of 3.5V. The device comes housed in a plastic, 4.0 x 4.2-mm surface-mount package especially designed to efficiently dissipate heat and can be shipped on tape-and-reels. Price is $3.88 each in quantities of 100.