Power MOSFETs Trim On-Resistance

Sept. 1, 2002
Claiming a 25% lower on-resistance than comparable devices, the IRF7754, 7755 and 7756 p-channel and 7757 n-channel HEXFET power MOSFETs provide on-resistances of 25 m_, 51 m_, 40 m_ and 35 m_, respectively, at a gate charge of -4.5V. The 12V

Claiming a 25% lower on-resistance than comparable devices, the IRF7754, 7755 and 7756 p-channel and 7757 n-channel HEXFET power MOSFETs provide on-resistances of 25 m_, 51 m_, 40 m_ and 35 m_, respectively, at a gate charge of -4.5V. The 12V p-channel devices are rated for gate voltages as low as 1.8V, making them suitable for use with logic ICs. They are offered in TSSOP-8 packages, which are 35% smaller than industry-standard SO-8 devices with no difference in performance levels. The MOSFETs have been optimized for battery and load-management applications in a variety of popular battery-operated products. The IRF7754 is priced at $0.61 each/10K and the IRF7755, 7756 and 7757 cost $0.52 each/10K. For more details, call Joe Engle at INTERNATIONAL RECTIFIER, El Segundo, CA. (310) 252-7019.

Company: INTERNATIONAL RECTIFIER

Product URL: Click here for more information

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