80V MOSFET Targets Isolated DC/DC Converters

April 1, 2003
Intended for use as both a primary- and a secondary-side MOSFET in isolated dc/dc converters, the IRF1312 HEXFET power MOSFET is rated at 80V and has an on-resistance of 10 m? at 10 VGS. As a primary-side MOSFET, the device can be employed with a

Intended for use as both a primary- and a secondary-side MOSFET in isolated dc/dc converters, the IRF1312 HEXFET power MOSFET is rated at 80V and has an on-resistance of 10 m? at 10 VGS. As a primary-side MOSFET, the device can be employed with a maximum input voltage of 60V. According to the company, the FET is best used in either a half- or full-bridge configuration for 36V to 60V and 48V regulated-input, bus-isolated converter applications. When used as a secondary-side MOSFET, the device is said to provide a 0.4% improvement in efficiency in 12V applications compared to standard 75V MOSFETs. And the device can be used in secondary-side circuits with a 15V maximum output. Available in TO-220AB, D2Pak and TO-262 packages, the IRF1312 80V MOSFET costs $1.06 each/10,000. For more information, contact Joe Engle at INTERNATIONAL RECTIFIER, El Segundo, CA. (310) 252-7019.

Company: INTERNATIONAL RECTIFIER

Product URL: Click here for more information

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