Electronicdesign 3871 Xl 01 Vishay 3 5
Electronicdesign 3871 Xl 01 Vishay 3 5
Electronicdesign 3871 Xl 01 Vishay 3 5
Electronicdesign 3871 Xl 01 Vishay 3 5
Electronicdesign 3871 Xl 01 Vishay 3 5

Power MOSFET Exploits Gen III TrenchFET Technology

Nov. 19, 2010
Emerging as the first asymmetric dual TrenchFET power MOSFET in a PowerPAIR 6 mm x 3.7 mm package using TrenchFET Gen III technology, the SiZ710DT combines a low- and high-side MOSFET in one compact device.

Emerging as the first asymmetric dual TrenchFET power MOSFET in a PowerPAIR 6 mm x 3.7 mm package using TrenchFET Gen III technology, the SiZ710DT combines a low- and high-side MOSFET in one compact device. It reduces on-resistance by 43 % compared to previous-generation devices. The low-side channel-two MOSFET of the SiZ710DT employs the optimized space from the asymmetric structure and delivers an on-resistance of 3.3 mΩ at 10 V and 4.3 mΩ at 4.5 V. Maximum current is 30A at +25°C and 24A at + 70°C. Also, the high-side channel-one MOSFET specifies an on-resistance of 6.8 mΩ at 10V and 9 mΩ at 4.5V. Pricing for the SiZ710DT is $0.40 each/100,000. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.

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