Power MOSFET Specs 52% Lower On Resistance

The RJK60S5DPK high-voltage N-channel power MOSFET achieves an on-resistance of 150 mΩ at ID = 10A, V_GSS = 10V, approximately 52% lower than the company’s existing MOSFETs. This reduces the amount of loss that occurs during power conversion. The device exhibits a drive capacitance of 6 nC at ID = 10A, V_GSS = 10 V, which accelerates the switching speed. This makes it possible to boost power-conversion efficiency through the use of high-speed switching. Samples of the RJK60S5DPK are available now, priced at $5 each. Mass production is scheduled for April. RENESAS TECHNOLOGY AMERICA INC., San Jose, CA. (408) 382-7407.