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    1. Technologies
    2. Power

    MOSFET Scores On-Resistance Benchmark

    March 2, 2011
    The SiA923EDJ dual 20V p-channel TrenchFET Gen III power MOSFET specifies an 8V gate-to-source voltage and what may be the lowest on-resistance ever achieved for a dual p-channel device in a 2 mm x 2 mm PowerPAK SC-70.

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    The SiA923EDJ dual 20V p-channel TrenchFET Gen III power MOSFET specifies an 8V gate-to-source voltage and what may be the lowest on-resistance ever achieved for a dual p-channel device in a 2 mm x 2 mm PowerPAK SC-70. On-resistance is 54 mΩ at 4.5V, 70 mΩ at 2.5V, 104 mΩ at 1.8V, and 165 mΩ at 1.5V. The device is 100 % Rg tested, halogen-free in accordance with IEC 61249-2-21, and complies with the RoHS Directive 2002/95/EC. Other features include a typical ESD protection of 2.5 kV. Pricing for the SiA923EDJ is $0.15 each/100,000. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.

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