Power MOSFETs Get Slimmer And Less Resistant

    March 11, 2011
    The SiA444DJT offers the lowest profile for an N-channel MOSFET in a 2 mm x 2 mm package while the SiA429DJT touts the lowest on-resistance for a sub-0.8 mm P-channel device.

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    The SiA444DJT offers the lowest profile for an N-channel MOSFET in a 2 mm x 2 mm package while the SiA429DJT touts the lowest on-resistance for a sub-0.8 mm P-channel device. The SiA444DJT's specifies an on-resistance of 17 mΩ at 10V and 22 mΩ at 4.5V and the SiA429DJT specifies 20.5 mΩ at 4.5V, 27 mΩ at 2.5V, 36 mΩ at 1.8V, and 60 mΩ at 1.5V. Both MOSFETs are 100 % Rg tested and are halogen-free in accordance with IEC 61249-2-21 and compliant to RoHS directive 2002/95/EC. Pricing starts at $0.15 each/100,000. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.

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