Power MOSFETs Get Slimmer And Less Resistant

March 11, 2011
The SiA444DJT offers the lowest profile for an N-channel MOSFET in a 2 mm x 2 mm package while the SiA429DJT touts the lowest on-resistance for a sub-0.8 mm P-channel device.

The SiA444DJT offers the lowest profile for an N-channel MOSFET in a 2 mm x 2 mm package while the SiA429DJT touts the lowest on-resistance for a sub-0.8 mm P-channel device. The SiA444DJT's specifies an on-resistance of 17 mΩ at 10V and 22 mΩ at 4.5V and the SiA429DJT specifies 20.5 mΩ at 4.5V, 27 mΩ at 2.5V, 36 mΩ at 1.8V, and 60 mΩ at 1.5V. Both MOSFETs are 100 % Rg tested and are halogen-free in accordance with IEC 61249-2-21 and compliant to RoHS directive 2002/95/EC. Pricing starts at $0.15 each/100,000. VISHAY INTERTECHNOLOGY, INC., Malvern, PA. (619) 336-0860.

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!