Power MOSFETs Vie For Low Power Chores

Aug. 12, 2011
Debuting as high density, cost effective solutions for low power applications, the company’s latest PQFN offerings feature a pair of power MOSFETs in each package. The PQFN2x2 and PQFN3.3x3.3 dual devices offer the flexibility of either common drain or half-bridge topologies.

Debuting as high density, cost effective solutions for low power applications, the company’s latest PQFN offerings feature a pair of power MOSFETs in each package. The PQFN2x2 and PQFN3.3x3.3 dual devices offer the flexibility of either common drain or half-bridge topologies. Using the company’s latest low-voltage silicon technologies (N and P), the devices promise to deliver ultra-low losses. The IRLHS6276, for example, features two MOSFETS, each with a typical on-state resistance of 33 m? in only a 4 mm2 area. Pricing for the IRLHS6276 begins at US $0.33 each/1,000. For more information, contact Sian Cummins at INTERNATIONAL RECTIFIER CORP., El Segundo, CA. (310) 252-7148.

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