HV Superjunction Technology Shrinks MOSFET On-Resistance

A 650-V superjunction MOSFET technology introduced by Infineon offers an R_DS(on) of 19 mΩ in a TO-247 package and 45 mΩ in TO-220 and D2PAK packages. The fast switching performance of the CoolMOS C7 pushes switching frequencies over 100 kHz while achieving titanium levels of efficiency in server power-factor-correction (PFC) stages. This reduces the space requirements for the passive components, thus enabling higher power density. Reduced energy in the output capacitance (E_OSS), as well as the low gate charge (Q_G), enhances efficiency at light load conditions. C7 is optimized for hard switching topologies such as continuous-conduction-mode power factor correction (CCM PFC), two transistor forward (TTF), and solar boost.

INFINEON TECHNOLOGIES