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2-W DC-DC Converter Suits High- And Low-Side IGBT Drivers

May 8, 2014
Murata’s MGJ2 2-W dc-dc converters suit high-side and low-side gate drives in bridge circuits using insulated gate bipolar transistors (IGBTs) and MOSFETs.

Murata’s MGJ2 2-W dc-dc converters suit high-side and low-side gate drives in bridge circuits using insulated gate bipolar transistors (IGBTs) and MOSFETs. They feature an isolation test voltage of 5.2 kV dc, using a combination of basic and supplementary insulation. (UL60950 approval is pending.) They also achieve a power density of 0.81 W/cm3, occupying a 1.96-cm2 footprint.

The converters have characterized dv/dt immunity, suiting reliable operation in fast switching applications. Partial discharge performance is also optimized for long service life. The extended operating temperature ranges up to 100°C.

The MGJ2 series comprises 12 models offering nominal input voltages of 5, 12, 15, or 24 V dc. For each input voltage, three output voltage combinations are available: +15/–5 V dc, +15/–8.7 V dc, or +20/–5 V dc.

MURATA

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