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60-V MOSFET Offers Increased Power Density in Switching Topologies

Oct. 9, 2019
Vishay Intertechnology’s Siliconix SiSS22DN features a gate charge of 22.5 nC and an output charge of 34.2 nC in a PowerPAK 1212-8S package.

Vishay Intertechnology Inc. recently introduced a new 60-V TrenchFET Gen IV n-channel power MOSFET that's optimized for standard gate drives to deliver maximum on-resistance down to 4 mΩ at 10 V. It comes in a thermally enhanced 3.3- x 3.3-mm PowerPAK 1212-8S package.

Designed to increase efficiency and power density in switching topologies, the Vishay Siliconix SiSS22DN features a low gate charge of 22.5 nC along with low output charge (QOSS). Unlike logic-level 60-V devices, the typical VGS(th) and Miller plateau voltage of the SiSS22DN are enhanced for circuits with gate-drive voltages above 6 V. The device provides optimized characteristics that enable short dead-times and prevent shoot-through in synchronous rectifier applications.

According to Vishay, the SiSS22DN's on-resistance is 4.8% lower than the next best product, while its QOSS of 34.2 nC results in the best-in-class QOSS times on-resistance, a critical figure of merit (FOM) for MOSFETs used in power-conversion designs employing zero voltage switching (ZVS) or switch-tank topology. To achieve higher power density, the device uses 65% less printed-circuit-board (PCB) space than similar solutions in 6- x 5-mm packages.

The SiSS22DN's specifications are fine-tuned to minimize conduction and switching losses simultaneously, claims the company. This results in increased efficiency that can be realized in multiple power-management system building blocks, including synchronous rectification in ac-dc and dc-dc topologies; primary-side switching in dc-dc converters, half-bridge MOSFET power stages in buck-boost converters, and OR-ing functionality in telecom and server power supplies; motor-drive control and circuit protection in power tools and industrial equipment; and battery protection and charging in battery-management modules.

The MOSFET is 100% RG- and UIS-tested, RoHS-compliant, and halogen-free.

Samples and production quantities of the SiSS22DN are available now, with lead times of 30 weeks subject to market conditions. Pricing for U.S. delivery in 10,000-piece quantities is approximately US$0.67 per piece.


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