Bidirectional 650-V GaN Switch Helps Boost Efficiency of Converter Architectures
The CoolGaN bidirectional 650-V G5 from Infineon Technologies is a gallium-nitride (GaN) switch capable of actively blocking voltage and current in both directions. The monolithic bidirectional switch (BDS) features a common-drain design and double-gate structure that makes it a simpler, more efficient alternative to traditional back-to-back configurations commonly used in converters.
By integrating two switches in one device, the BDS simplifies the design of cycloconverter topologies that offer improved efficiency, increased reliability, and a more compact design. In addition, the device supports advanced grid functions such as reactive power compensation and bidirectional operation.
These unique capabilities allow them to improve the efficiency and reliability of a wide range of applications, including:
- Microinverters: For residential and commercial solar installations.
- Energy storage systems (ESS): Battery chargers and dischargers, etc.
- Electric-vehicle (EV) charging: The BDS supports faster, more efficient charging and vehicle-to-grid (V2G) functionality.
- AI data centers: The CoolGaN BDS can support higher switching frequencies and power densities for architectures such as Vienna rectifiers and H4 PFCs.
- Motor control: Current-source inverters (CSIs) for industrial motor drives that use CoolGaN BDS offer multiple benefits such as:
- Producing a sinusoidal output voltage, which supports longer cable runs, reduced losses, and improved fault tolerance.
- Replacing the DC-link capacitor with an inductor, improving high-temperature performance and short-circuit protection.
- Higher efficiency at partial loads, lower EMI, inherent buck-boost capability for voltage variation, and scalability for parallel operation.
The CoolGaN 650-V G5 is available for ordering now, as are samples of the 110-mΩ product. Additional information can be found by clicking here.
