PowerPAK 8x8SW Package Promotes Cool-Running, Low-Loss 80-V MOSFETs
The SiEH4800EW 80-V TrenchFET Gen IV n-channel power MOSFET developed by Vishay leverages a PowerPAK 8x8SW bond wireless (BWL) package to enhance thermal performance and lower losses. With on-resistance down to 0.88 mΩ (typical) at 10 V, the device minimizes conduction-related power losses while improving thermal performance with a low maximum Rth(J-C) of 0.36 °C/W and operation to +175°C.
These characteristics suit the MOSFET for synchronous rectification and OR-ing functionality in applications such as motor-drive controls, power tools, welding equipment, plasma cutting machines, battery-management systems, robotics, and 3D printers.
The MOSFET’s TO-263 package has an 8- × 8-mm footprint (roughly 50% less than most comparable MOSFETs) and an ultra-low profile of 1 mm. The packaging also features a fused lead that increases the source PAD solderable area to 3.35 mm2 (4X larger than a traditional PIN solder area), decreasing the current density between the MOSFET and PCB. This reduces the risk of electromigration and enables a more robust design.
Samples and production quantities of the SiEH4800EW are available now, with lead times of 13 weeks. Additional technical information is available here.
