Power MOSFET Packages Reduce Thermal Resistance and On-Resistance

Sept. 19, 2025

The new SOP Advance(E) package from Toshiba brings lower loss and higher efficiency to industrial equipment, data centers, and communication base stations.

Lee Goldberg

Related To:

Electronic Design

Toshiba Electronics’ latest N-channel power MOSFETs, the 80-V TPM1R908QM and 150-V TPM7R10CQ5, feature the company’s next-generation SOP Advance(E) package. The package significantly enhances their performance in switched-mode power supplies for demanding industrial applications, including data centers and communication base stations.

The compact SOP Advance(E) package typically measures 4.9 × 6.1 mm and cuts package resistance by roughly 65% and thermal resistance by approximately 15% over Toshiba’s existing SOP Advance(N) package. The reductions in on-resistance and suppressed temperature rise due to improved thermal resistance contribute to a lower overall on-resistance, even considering positive temperature characteristics.

As a result, 80-V TPM1R908QM exhibits a reduction in drain-source on-resistance (R_DS(on)) of approximately 21% and channel-case thermal resistance (R_th(ch-c)) of approximately 15% when compared to Toshiba’s existing product, the TPH2R408QM, of same voltage rating. The TPM1R908QM features a drain-source voltage (V_DSS) of 80 V, a drain current (I_D) of 238 A (T_c = 25°C), and a maximum R_DS(on) of 1.9 mΩ (V_GS = 10 V).

Similarly, the 150-V TPM7R10CQ5 achieves approximately 21% lower R_DS(on) and approximately 15% lower R_th(ch-c) than Toshiba’s existing TPH9R00CQ5, also at the same voltage. The TPM7R10CQ5 comes equipped with a high-speed body diode for increased efficiency in synchronous rectification. It offers a V_DSS of 150 V, an I_D of 120 A (T_c = 25°C), and a maximum R_DS(on) of 7.1 mΩ (V_GS = 10 V). Both products have a channel temperature (T_ch) of 175°C and a maximum R_th(ch-c) of 0.6°C/W (T_c = 25°C).

To further support circuit design for switched-mode power supplies, Toshiba also provides a G0 SPICE model for quick circuit function verification, alongside highly accurate G2 SPICE models that precisely reproduce transient characteristics.

About the Author

Lee Goldberg | Contributing Editor

Lee Goldberg is a self-identified “Recovering Engineer,” Maker/Hacker, Green-Tech Maven, Aviator, Gadfly, and Geek Dad. He spent the first 18 years of his career helping design microprocessors, embedded systems, renewable energy applications, and the occasional interplanetary spacecraft. After trading his ‘scope and soldering iron for a keyboard and a second career as a tech journalist, he’s spent the next two decades at several print and online engineering publications.

Lee’s current focus is power electronics, especially the technologies involved with energy efficiency, energy management, and renewable energy. This dovetails with his coverage of sustainable technologies and various environmental and social issues within the engineering community that he began in 1996. Lee also covers 3D printers, open-source hardware, and other Maker/Hacker technologies.

Lee holds a BSEE in Electrical Engineering from Thomas Edison College, and participated in a colloquium on technology, society, and the environment at Goddard College’s Institute for Social Ecology. His book, “Green Electronics/Green Bottom Line - A Commonsense Guide To Environmentally Responsible Engineering and Management,” was published by Newnes Press.

Lee, his wife Catherine, and his daughter Anwyn currently reside in the outskirts of Princeton N.J., where they masquerade as a typical suburban family.

Lee also writes the regular PowerBites series.