Latest from Power

Dreamstime_hanhanpeggy_19111839 (generated by AI)
dreamstime_hanhanpeggy_19111839
ID 254007506 © Pop Nukoonrat | Dreamstime.com
sustainable_dreamstime_l_254007506
Dreamstime_khunaspix_67619984
dreamstime_khunaspix_67619984_promo
ID 183244249 copyright Luschen | Dreamstime.com
dreamstime_l_183244249
ID 365125499 © Kittichai Boonpong | Dreamstime.com
evcharging_dreamstime_l_365125499
ID 141544934 © Lovelyday12 | Dreamstime.com
renewable_dreamstime_l_141544934
673f74140e8d8dc7ae5e29c7 Dd Gansmps Thumbnail

Moving on to GaN Switches in Switch-Mode Power Supplies (Download)

Nov. 21, 2024
Log in to download the PDF of this article on using GaN devices in SMPS design.

Read this article online.

A common question comes up among power-management design engineers these days: “Is it time to switch from silicon power switches to GaN-based ones? Gallium-nitride (GaN) technology offers many advantages over traditional silicon-based MOSFETs. As a wide-bandgap semiconductor, GaN allows power switches to operate at high temperatures and achieve high power density. 

Due to its high breakdown voltage, GaN is suitable for applications above 100 V. Even below 100 V, its high power density and fast switching capability provide benefits like higher power-conversion efficiency in various power-supply designs.

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!