High efficiency, high current handling capability and small form factors are critical to power supply designers when selecting components for voltage regulator solutions. To meet this need, Fairchild Semiconductor developed its family of Generation II XS DrMOS [Integrated Driver + MOSFET] devices offering high efficiency and power density to enable designers to meet specific design needs for various applications.
Generation II XS DrMOS devices, available in a small, 6mm x 6mm high performance clip PQFN package, feature higher system efficiency with over 91.5 percent heavy load efficiency at 12Vin, 1Vout, and 25A, and 94 percent peak efficiency. Generation II XS DrMOS can be operated at a 2MHz switching frequency and have up to 50A of current handling capability.
Leveraging the company's expertise in MOSFETs, gate driver ICs, and packaging technology, Fairchild optimized Generation II XS DrMOS devices for greater efficiency and developed new features. These enhancements make the Generation II XS DrMOS family ideal for applications such as blade servers, high performance gaming motherboards, high performance notebooks, graphic cards, and high current DC-DC point-of-load (POL) converters.
Devices in the portfolio offer a 5V and 3.3V Tristate level to match the Intel® 4.0 DrMOS specification and are compatible with a variety of PWM controllers on the market. The Generation II XS DrMOS portfolio significantly reduces ringing due to PowerTrench® MOSFET Shielded Gate technology in both the control FET and synchronous FET. The synchronous FET also integrates a Schottky diode which eliminates external snubber circuits, improving overall performance and power density while reducing space and cost.
Generation II XS DrMOS devices also include a thermal warning feature for customers to prevent over temperature conditions during fault situations.
