Image

High-Isolation DC-DCs Can Replace Two Converters In IGBT Systems

Feb. 20, 2014
RECOM Power’s has designed a series of dc-dc converters with asymmetric outputs of +15 V and ‒9 V, suiting them for power insulated-gate bipolar transistor (IGBT) drivers.

RECOM Power’s has designed a series of dc-dc converters with asymmetric outputs of +15 V and ‒9 V, suiting them for power insulated-gate bipolar transistor (IGBT) drivers. The asymmetric-output design effectively replaces the need for two converters. The devices come with input voltage of 5, 12, and 24 V dc, and offer up to 6.4 kVdc/1-sec. isolation. Operating temperature ranges from ‒40 to +90°C without derating. Efficiency elevates up to 85%. A variety of pin-outs and packages (single and dual in-line) meet requirements of various IGBT applications. All series members feature short-circuit protection, and are EN60950-1 certified. The converters will be available through Richardson RFPD, which also will offer full design support capabilities (technical expertise and design-in assistance).

RECOM POWER INC.

RICHARDSON RFPD INC.

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!

Sponsored