Image

2-W DC-DC Converters Target “High/Low” Side IGBT Drives

April 28, 2014
Murata Power Solutions’ MGJ2 series of 2-W, high-isolation, dual-output dc-dc converters focus on powering “high-side” and “low-side” gate drives in bridge circuits that use insulated-gate bipolar transistors (IGBTs) and MOSFETs.

Murata Power Solutions’ MGJ2 series of 2-W, high-isolation, dual-output dc-dc converters focus on powering “high-side” and “low-side” gate drives in bridge circuits that use insulated-gate bipolar transistors (IGBTs) and MOSFETs. The encapsulated devices, which offer basic and supplementary insulation with a 5.2-kV dc isolation test voltage, conform to the UL60950 standard (pending). Twelve models in the series offer nominal input voltages of 5, 12, 15, or 24 V dc. Each input voltage has three output voltage combinations: +15/‒5 V dc, +15/‒8.7 V dc, or +20/‒5 V dc. The SIP-packaged converters occupy 1.96 cm2, achieving a power density of 0.81 W per cm3. Characterized dv/dt immunity suits fast switching applications. Operating temperature range extends to +100°C. Typical applications include high-power ac-dc conversion, motor drives, and solar-power inverters.

MURATA POWER SOLUTIONS

About the Author

Staff

Articles, galleries, and recent work by members of Electronic Design's editorial staff.

Sponsored Recommendations

Comments

To join the conversation, and become an exclusive member of Electronic Design, create an account today!