Electronicdesign 7240 0425npdtmurata

2-W DC-DC Converters Target “High/Low” Side IGBT Drives

April 28, 2014
Murata Power Solutions’ MGJ2 series of 2-W, high-isolation, dual-output dc-dc converters focus on powering “high-side” and “low-side” gate drives in bridge circuits that use insulated-gate bipolar transistors (IGBTs) and MOSFETs.

Murata Power Solutions’ MGJ2 series of 2-W, high-isolation, dual-output dc-dc converters focus on powering “high-side” and “low-side” gate drives in bridge circuits that use insulated-gate bipolar transistors (IGBTs) and MOSFETs. The encapsulated devices, which offer basic and supplementary insulation with a 5.2-kV dc isolation test voltage, conform to the UL60950 standard (pending). Twelve models in the series offer nominal input voltages of 5, 12, 15, or 24 V dc. Each input voltage has three output voltage combinations: +15/‒5 V dc, +15/‒8.7 V dc, or +20/‒5 V dc. The SIP-packaged converters occupy 1.96 cm2, achieving a power density of 0.81 W per cm3. Characterized dv/dt immunity suits fast switching applications. Operating temperature range extends to +100°C. Typical applications include high-power ac-dc conversion, motor drives, and solar-power inverters.

MURATA POWER SOLUTIONS

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