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    1. Technologies
    2. Power
    3. Power Supply
    4. Discrete Power Semis

    Licensing Lays Groundwork for SiC Devices

    Feb. 28, 2006
    Advanced Power Technology has entered into a license agreement with Northrop Grumman Corporation to manufacture next-generation silicon carbide microelectronic devices.

    Advanced Power Technology (www.advancedpower.com), a power semiconductor supplier, has entered into a license agreement with the Electronic Systems’ sector of Northrop Grumman Corporation (www.northropgrumman.com) to manufacture next-generation silicon carbide (SiC) microelectronic devices. This agreement forms an exclusive foundry supplier relationship whereby Northrop Grumman will license certain SiC technology to Advanced Power Technology including relevant SiC patents and manufacturing methods to enable Advanced Power Technology to manufacture proprietary SiC microelectronic devices exclusively for Northrop Grumman.

    The agreement also allows Advanced Power Technology to use the licensed technology to manufacture and sell other SiC devices for commercial purposes. Both companies possess substantial expertise in SiC technology and view SiC-based power semiconductors as strategically important to a wide array of next generation
    applications.

    The driving force for the adoption of silicon carbide for military as well as civilian applications is the need to reduce weight and size of power control and management systems and support equipment such as cooling systems and heat dispersing packaging. SiC semiconductors have demonstrated large performance advantages in numerous test beds over silicon components.

    Military applications include radar, hybrid power systems, electric power control and distribution, electronic jamming, and wideband communications systems. Potential nonmilitary applications include hybrid vehicles, electric power transmission, computer/servers, medical systems, and alternative energy.

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