Semiconductor Vendor Expands BJT Packaging

ON Semiconductor has expanded its low-Vce bipolar junction transistors portfolio to include WDFN6, WDFN3, SOT-23, SOT-563 and ChipFET packages.
Nov. 1, 2006

ON Semiconductor has expanded its low-Vce(sat) bipolar junction transistors (BJTs) portfolio to include WDFN6, WDFN3, SOT-23, SOT-563 and ChipFET packages. These devices provide better power efficiency and longer battery life than traditional BJTs or planar MOSFETS.

The new low-Vce(sat) surface mount devices are specifically designed for use in low voltage, high-speed switching applications. They feature a saturation voltage of 45-mV at 1 A and high current gain. They also offer a high ESD tolerance of >8000 V.

The SOT-23 offers the lowest cost. The SOT-563 is the smallest of the new package offerings at 1.6 mm x 1.6 mm x 1.0 mm. The two WDFN packages are 2.0 mm x 2.0 mm with a package height of 0.7 mm. The ChipFET dimensions are 3.0 mm x 2.0 mm x 1.0 mm.

The complete series is available in these and other packages, including SC-88, SC-74 and TSOP-6. They are priced between $0.18 to $0.40 per unit for quantities of 10,000 units.
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