Package Options Enhance High-Efficiency BJTs

July 11, 2007
ON Semiconductor has expanded its low–VCE(SAT) bipolar-junction-transistors (BJTs) portfolio to include the NSSxxx series of PNP and NPN devices available in multiple packages.

ON Semiconductor has expanded its low–VCE(SAT) bipolar-junction-transistors (BJTs) portfolio to include the NSSxxx series of PNP and NPN devices available in multiple packages. Package options include the WDFN, SOT-23, SOT-223, SOT-563, ChipFET and SC-88 types. These surface-mount devices are designed for use in low-voltage switching applications requiring high efficiency.

The NSSxxx features a saturation voltage of 45 mV at 1 A, and high current gain. Offering an ESD tolerance of greater than 8000 V, the BJTs are self-protecting against surges. The medium switching speeds provide lower noise harmonics than MOSFETS, and are therefore better suited to applications requiring low EMI. The transistors are priced between $0.14 to $0.27 per unit for quantities of 10,000 units.

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