Power Semiconductor Vendors Announce SiC Agreement

July 24, 2007
Under the terms of a recent agreement, Nihon Inter Electronics Corporation will introduce a line of silicon-carbide-based Schottky power rectifier diodes in Japan with die manufactured by Cree.

Under the terms of a recent agreement, Nihon Inter Electronics Corporation (NIEC) will introduce a line of silicon-carbide-based (SiC-based) Schottky power rectifier diodes in Japan with die manufactured by Cree. Compared with traditional silicon-based diodes, Cree’s SiC-based rectifiers can simplify PFC-boost design by eliminating the need for snubbers and by reducing components. SiC-based rectifiers can also reduce power losses, and produce significantly less EMI

“We are excited to see the growing interest in power components based on silicon carbide. Our agreement with NIEC will allow us access to their extensive marketing and sales channels in Japan, and is consistent with our current strategy to create a more global sales and marketing presence. We are excited about the potential impact our two companies can make on the Japanese market by combining our strengths,” said John Palmour, Cree executive vice president for advanced devices.

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