MOSFET Boosts Efficiency in Paralleled Server Supplies

    Jan. 2, 2008
    From STMicroelectronics, the STV300NH02L power MOSFET provides micro-ohm on-resistance to reduce losses in power supply systems such as server applications where n-channel MOSFETs are used to parallel power supplies.

    From STMicroelectronics, the STV300NH02L power MOSFET provides micro-ohm on-resistance to reduce losses in power supply systems such as server applications where n-channel MOSFETs are used to parallel power supplies. This 20-V device takes advantage of ST’s ribbon-bonding technology, which delivers a typical RDS(ON) of 800 µΩ.

    The MOSFET is also suited to reducing secondary rectification losses in dc-dc converters, and provides excellent protection under short-circuit conditions, with a very low turn-off time. The STV300NH02L is available in a PowerSO-10 package, priced at $4.50 each in quantities of 1000. Further information is available at www.st.com/pmos.

    Continue Reading

    Sponsored Recommendations

    Comments

    To join the conversation, and become an exclusive member of Electronic Design, create an account today!