600-V Superjunction MOSFETS Improve FOM

A family of twelve 600-V DTMOS II superjunction MOSFETs contributes to raising the efficiency of switched-mode power supplies

Sept. 10, 2008

6 min read

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From Toshiba America Electronic Components, a family of twelve 600-V DTMOS II superjunction MOSFETs contributes to raising the efficiency of switched-mode power supplies, such as AC adapters in notebook and desktop computers, servers, flat panel displays, and ballasts. The DTMOS II MOSFETs employ a superjunction structure that enables a simultaneous reduction in both on-state resistance and gate charge, reducing the associated figure-of-merit (FOM) by 68% compared to conventional Toshiba MOSFET technology (see device specifications in the table below).

Device type: 600-V superjunction MOSFETs
Voltage rating (VDSS): 600 V
On-resistance (RDSON): as low as 0.19 Ω (max.) for the 20-A devices at VDS = 600 V.
Gate Charge(QG): as low as 14 nC
Current Rating (ID max): 12 A, 15 A, and 20 A
Features: RDS(ON) x Qg is approximately 68% less than the company’s conventional MOSFETs.
Operating temperature range (TJ): not available
Packaging: TO-3P(N), TO-220SIS, TO-220(W) and TFP, a compact surface mount package
RoHS compliant? not available
Target Applications: switched-mode power supplies, such as AC adapters in notebook and desktop computers, servers, flat panel displays, and ballasts.Pricing: $0.89 each in sample quantities
Pricing: starting at $1.30
Availability: samples are available now; the 12-A TK12A60U, 15-A TK15A60U, and 20-A TK20A60U are in mass production now; the remaining devices are scheduled to be in mass production by October 2008.
Datasheets posted on web? no.

Table. Specifications for 600-V DTMOS II superjunction MOSFETs

Part Number	Gate-Source Voltage VDSS (max.)	Drain Current ID (max.)	Drain-source ON resistance RDS(ON) (max.) 2	Gate Charge, Qg (typ.) 3	Avalanche Energy (mJ)		Package		Planned Mass Production
Part Number	Gate-Source Voltage VDSS (max.)	Drain Current ID (max.)	Drain-source ON resistance RDS(ON) (max.) 2	Gate Charge, Qg (typ.) 3	Single Pulse4	Repetitive5	Toshiba Package/ Dimensions (mm)	Industry Standard Equivalent	Planned Mass Production
TK20J60U	+30V	20A	0.19 Ω	27nC	144	19	TO-3P(N) 15.9 x 23.3 x 4.8	TO-247AD	Sept. ‘08
TK20A60U					144	4	TO-220SIS 10 x 17.8 x 4.5	TO-220F (Isolated)	Sept. ‘08
TK20D60U					144	19	TO-220(W) 10 x 17.8 x 4.5	TO-220 (Non-isolated)	Sept. ‘08
TK20X60U					144	15	TFP 9.2 x 10.7 x 3.0	N/A	Oct. ‘08
TK15J60U	+30V	15A	0.3 Ω	17nC	81	17	TO-3P(N) 15.9 x 23.3 x 4.8	TO-247AD	Now
TK15A60U					81	4	TO-220SIS 10 x 17.8 x 4.5	TO-220F (Isolated)	Now
TK15D60U					81	17	TO-220(W) 10 x 17.8 x 4.5	TO-220 (Non-isolated)	Now
TK15X60U					81	12.5	TFP 9.2 x 10.7 x 3.0	N/A	Oct. ‘08
TK12J60U	+30V	12A	0.4 Ω	14nC	69	14	TO-3P(N) 15.9 x 23.3 x 4.8	TO-247AD	Sept. ‘08
TK12A60U					69	3.5	TO-220SIS 10 x 17.8 x 4.5	TO-220F (Isolated)	Sept. ‘08
TK12D60U					69	14	TO-220(W) 10 x 17.8 x 4.5	TO-220 (Non-isolated)	Sept. ‘08
TK12X60U					69	10	TFP 9.2 x 10.7 x 3.0	N/A	Oct. ‘08

¹ The product of on-state resistance and gate charge. The smaller this value is, the better the performance of the MOSFET.
² V_GS = 10V, I_D = 10A (20A devices), 7.5A (15A devices), 6A (12A devices).
³ V_DD = 400 V, V_GS = 10V, I_D = 20A (20A devices), 15A (15A devices), 12A (12A devices)
⁴ V_DD = 90V, T_ch =25°C (initial), R_G = 25 ohm,