Toshiba America Electronic Components, Inc. has expanded its lineup of MOSFETs with a selection of higher power 40V, 60V and 80V devices well suited for use in the primary side switch of an isolated DC-DC bus converter in mobile communications applications. These N-Channel devices can also be used in non-isolated DC-DC converters.
Developed by Toshiba Corp., the seven new MOSFETs feature fast switching, enabled through lower gate charge (QSW) and lower gate resistance (Rg ). The new MOSFETs are offered in SOP Advance packages with Aluminum Strap (Al-Strap) connections instead of conventional wire bonding technology to further reduce RDS(ON) .
The three 40V MOSFETs: TPCA8045-H, TPCA8046-H and TPCA8047-H, feature drain current of 46 A, 38A and 32A respectively, and a range of RDS(ON) , capacitance and gate charge values, shown in the table below, to meet various load current requirements.
The three 60V devices: TPCA8048-H, TPCA8049-H and TPCA8050-H feature drain current of 35A, 28A and 24A respectively, and also provide a range of RDS(ON) , capacitance and gate charge values, shown in the table below, to meet various load current requirements.
The seventh device in the expanded lineup, TPCA8051-H, is an 80V MOSFET with drain current of 28A, RDS(ON) (typ.) of 6.0 m?.
