Vishay Intertechnology, Inc. released three new 500-V MOSFETs that extend its Gen 6.2 n-channel planar FET technology to the TO-220, TO-220F, and TO-247 packages.
The new SiHP18N50C (TO-220), SiHF18N50C (TO-220 FULLPAK), and SiHG20N50C combine their 500-V rating with low 0.270 ohm maximum on-resistance at a 10-V gate drive. This low RDS(on) translates into lower conduction losses that save energy in power factor correction (PFC) and pulsewidth modulation (PWM) applications in a wide range of electronic systems, including LCD TVs, PCs, servers, telecom systems, and welding machines.
In addition to their low on-resistance, the devices feature a low gate charge of 65 nC. Gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is a low 17.75.
For reliable operation, the devices are 100 % avalanche tested and feature high single-pulse (EAS) and repetitive (EAR) avalanche energy capabilities. Peak current handling is 72 A pulsed and 18 A continuous. All three devices feature an effective output capacitance specification. Compared with previous-generation 500-V power MOSFETs, the new devices also feature improved transconductance and reverse recovery characteristics.
The SiHP18N50C and SiHF18N50C are available with lead (Pb)-free terminations in both the TO-220 and FULLPAK package types. The SiHG20N50C is offered in a lead (Pb)-free TO-247. Samples of the new devices are available now. Production quantities will be available in Q3 2009 with lead times of 8 to 10 weeks for larger orders. Pricing starts at $1.50 for the SiHP18N50C and SiHF18N50C and $2.00 for the SiHG20N50C.
