International Rectifier, IR, introduced the AUIRG7CH80K6B-M 1200V insulated gate bipolar transistor (IGBT) with Solderable Front Metal (SFM) for high-current, high-voltage automotive inverter modules used in electric vehicles (EV) and hybrid electric vehicles (HEV), as well as medium power drives.
The AUIRG7CH80K6B-M utilizes IR's latest-generation field stop trench technology to significantly reduce conduction and switching losses. Additionally, the new device's solderable front metal (SFM) allows dual-sided cooling to improve thermal performance,
and enables wire bonds to be eliminated to achieve higher reliability.
Other key performance benefits include square reverse bias safe operating area (RBSOA), up to 175°C maximum operating temperature, high peak turn-off capability, positive VCE(on) temperature co-efficient and short-circuit rating of 6 microseconds. The AUIRG7CH80K6B-M is available in die-form only.
The device is qualified according to automotive standards and is part of IR's automotive quality initiative targeting zero defects.
Pricing for the AUIRG7CH80K6B-M begins at US $14.00 each in 100,000-unit quantities. Production orders are available immediately. Prices are subject to change.
