Vishay Intertechnology, Inc. released three new 500-V, 12-A n-channel power MOSFETs with ultra-low 0.555-ohm maximum on-resistance at a 10-V gate drive, and an improved gate charge of 48 nC in TO-220, TO-220 FULLPAK, and D2PAK (TO-263) packages. The low on-resistance of the SiHP12N50C-E3 (TO-220), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D2PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulse width modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PC and LCD TVs, and open-frame power supplies.
In addition to their low on resistance, the devices feature a gate charge of 48 nC. Gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is a low 26.64 ohm-nC.The new n-channel MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. Compared to previous-generation MOSFETs, the SiHP12N50C-E3, SiHF12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and losses.
The devices are compliant to RoHS Directive 2002/95/EC and 100 % avalanche-tested for reliable operation. Samples and production quantities of the new power MOSFETs are available now, with lead times of eight to 10 weeks for larger orders. Pricing for U.S. delivery only starts at $0.65 for the SiHP12N50C-E3, $0.71 for the SiHF12N50C-E3, and $0.72 for the SiHB12N50C-E3.
