Asymmetric Dual TrenchFET Power MOSFET

Feb. 1, 2011
VISHAY INTERTECHNOLOGY, Inc. introduced the first asymmetric dual TrenchFET power MOSFET in the PowerPAIR 6 mm by 3.7 mm package to utilize TrenchFET

Find a downloadable version of this story in pdf format at the end of the story.

VISHAY INTERTECHNOLOGY, Inc. introduced the first asymmetric dual TrenchFET® power MOSFET in the PowerPAIR® 6 mm by 3.7 mm package to utilize TrenchFET Gen III technology, reducing on-resistance by 43% when compared to previous-generation devices, while offering higher maximum current and enabling increased efficiency. Offering the industry's lowest on-resistance for this device type, the SiZ710DT combines a low- and high-side MOSFET in one compact device, saving space over using two discrete solutions in dc-to-dc converters. Before the PowerPAIR package type, designers would have to use two single devices to achieve the low on-resistance and high maximum current required for system power, POL, low-current DC/DC, and synchronous buck applications in notebooks, VRMs, power modules, graphic cards, servers, and gaming consoles. The SiZ710DT's specifications allow designers to use one device that is one-third smaller than two discrete PowerPAK 1212-8 devices, or two thirds smaller than two discrete SO-8 devices, saving solution cost and space, including the PCB clearance and labeling area in between the two discrete MOSFETs. In addition, replacing SO-8 devices in lower-current and lower-voltage applications can increase efficiency. A single PowerPAK 1212-8 or SO-8 has on-resistance down to the 5 mΩ or 4 mΩ range, respectively. However, the low-side Channel 2 MOSFET of the SiZ710DT utilizes the optimized space from the asymmetric structure and offers a lower on-resistance of 3.3 mΩ at 10 V and 4.3 mΩ at 4.5 V, and a maximum current of 30 A at + 25 °C and 24 A at + 70 °C. In addition, the high-side Channel 1 MOSFET features an improved on-resistance of 6.8 m? at 10 V and 9.0 m? at 4.5 V. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. In addition, the SiZ710DT's pinning is arranged so that the input is on one side and the output is on the other, further simplifying the layout and saving PCB space. The device is 100% Rg and UIS tested, compliant to RoHS directive 2002/95/EC, and halogen-free according to IEC 61249-2-21. Samples and production quantities of the new SiZ710DT TrenchFET power MOSFET are available now, with lead times of 12 to 14 weeks for larger orders. Pricing for U.S. delivery starts at $0.40 per piece in 100,000-piece quantities.

Vishay Intertechnology, Inc.
Malverne, PA

Download the story in pdf format here.

Sponsored Recommendations


To join the conversation, and become an exclusive member of Electronic Design, create an account today!