Fairchild Semiconductor introduces the FDMS86500L N-Channel, PowerTrench® MOSFET. The device is designed specifically to minimize conduction loss, switch node ringing, and to improve the overall efficiency of DC-DC converters. Through an advanced package and silicon combination, the FDMS86500L provides significantly lower RDS(ON) (2.5mohms @ VGS = 10V, ID=25A), enabling lower conduction losses in an industry-standard 5mm x 6mm Power 56 package.
Additionally, the FDMS86500L, using shielded-gate MOSFET technology, provides very low switching losses (Qgd 14.6 nC Typ.). When combined with the device's low conduction losses, this provides designers the improved power density they need.
The FDMS86500L offers a better figure of merit (RDS(ON) * QG), delivering high efficiency and lower power dissipation in order to meet efficiency standards and regulations.
Other features of the FDMS86500L include next-generation enhanced body diode technology engineered for soft recovery, MSL1 robust package design, 100 percent UIL tested and is RoHS compliant.
Price: US $0.90 in 1,000 quantity pieces
Availability: Samples available now
Delivery: 8-10 weeks ARO
