Helping to increase battery efficiency and reduce board space, the miniature DMP1245UFCL 12V P-channel enhancement mode MOSFET from Diodes Incorporated has been introduced to meet the requirements of designers of space-starved portable products including smartphones and tablet computers.
The MOSFET is provided in the ultra compact and thermally efficient DFN1616 package and is characterized by a very low RDS(on) that ensures conduction losses are kept to a minimum, thereby increasing battery life. For example, at 29mΩ at VGS of 4.5V the MOSFET's on-resistance performance is 15% better than that of its closest rival, benefitting battery disconnect and general load-switching applications.
The DFN1616 has a typical off-board profile of 0.5mm, making it 20% thinner than competitor equivalents, and occupies a PCB area of just 2.56mm2, 55% of that occupied by alternative larger 2mm by 2mm packages.
DMP1245UFCL also offers users the advantage of an increase in protection against ESD. With gate protection specified at 3kV, 50% higher than nearest equivalents, the MOSFET is highly resistant to the effects of human-borne ESD.
The miniature DMP1245UFCL 12V P-channel MOSFET from Diodes Incorporated is priced at $0.15 USD each in 3k quantities.
Diodes Inc.
Part Number: DMP1245UFCL
