Cree, Inc. releases the industry's first fully qualified SiC MOSFET power devices in "bare die" or chip form for use in power electronics modules. Cree's SiC Z-FET MOSFETs and diodes are used in advanced power electronics circuits to achieve significantly higher levels of energy efficiency than is possible with conventional silicon devices.
Power modules typically combine a number of discrete power switching devices - MOSFETs and diodes - in a single integrated package for high-voltage power electronics applications such as three-phase industrial power supplies, telecom power systems and power inverters for solar and wind energy systems. In traditional MOSFET packaging technologies, the parasitic inductance of the long leads can limit the switching capability of SiC MOSFETs. By offering Cree customers bare die alternatives, circuit designers can now take full advantage of the switching performance of SiC technology by reducing the effects of the package-parasitic inductance.
The new Cree power MOSFET devices are initially available in two versions: the CPMF-1200-S080B measures 4.08mm x 4.08mm and is rated at 1200V/20A with a nominal on-resistance (RDS(ON)) of 80mΩ; and the CPMF-1200-S160B measures 3.1mm x 3.1mm and is rated at 1200V/10A with a nominal on-resistance (RDS(ON)) of 160mΩ. Operating junction temperature for both devices is rated at -55°C to +135°C.
The two versions of the 1200V MOSFET die are fully qualified and released for production use and available to Cree's customers, as well as through Cree's Power die distributor Semi Dice. Cree has published specifications and detailed design guidelines, including recommendations on die attach and bonding, to assist power module manufacturers in the use of the new devices and optimizing their designs. In addition, Cree is pleased to offer customers the availability of a SiC MOSFET Model created to help with early simulation and evaluation. The Cree model can be downloaded at: www.cree.com/power/mosfet_model_req.asp.
