Renesas Electronics Corp. has announced the availability of eight new low-loss P- and N-channel power metal-oxide-semiconductor field-effect-transistor (MOSFET) products optimized for use in portable electronics including smartphones and tablets. Featuring industry-leading low loss (low on-resistance), the new devices include the 20 V (VDSS) µPA2600 and the 30 V µPA2601, equipped in ultra-compact 2 mm × 2 mm packages to deliver increased power efficiency and miniaturization within smaller mobile device form factors.
The µPA2600 and µPA2601 MOSFETs achieve these demands for further miniaturization and industry-leading low on-resistance in portable devices while reducing mounting areas in a wide variety of applications, including load switches (which turn power applied to ICs on or off) and charge/discharge control in portable devices and on/off control and overcurrent cutoff switches in RF power amplifiers (amplifiers for high-frequency signals). .
Equipped in 2 mm × 2 mm ultra- compact package, the µPA2600 and µPA2601 MOSFETs achieve an on-resistance of 9.3 mΩ (typical value at VGSS=4.5 V) for the 20 V (VDSS) µPA2600 device and 10.5 mΩ (typical value at VGSS=10 V) for the 30 V µPA2601 device, enabling power savings in end-use products. .
Renesas achieved the use of 2 mm × 2 mm ultra- compact packages by placing large-area high-performance chips in miniature packages and using an exposed heat sink miniature package, thus efficiently dissipating the package heat to the mounting board. The µPA2600 and similar products can reduce the mounting area by approximately 30 percent compared to existing 3 mm × 2 mm packages, and the µPA2672 and similar products can reduce the mounting area by approximately 40 percent compared to existing 3 mm × 3 mm packages. .
Comprising eight devices, the new P- and N-channel power MOSFETs are concentrated in the 12- to 30 V range common in portable devices: 4 P-channel products including the µPA2630, 3 n-channel products including the µPA2600, and the µPA2690, which holds both an N-channel and a P-channel device in a single package. .
Samples of the µPA2600 and µPA2601 power MOSFETs will be available in April 2012, priced at US $0.4 per unit. Mass production is scheduled to begin in May 2012 and is expected to reach a combined volume of 3,000,000 units per month for all eight products by 1H of FY2013. (Pricing and availability are subject to change without notice.)
