High Performance Field Stop IGBTs

July 27, 2012
ON Semiconductor introduced a new series of Field Stop Insulated Gate Bipolar Transistors (IGBTs) targeted at industrial motor control and consumer products.

ON Semiconductor introduced a new series of Field Stop Insulated Gate Bipolar Transistors (IGBTs) targeted at industrial motor control and consumer products. The NGTB15N120, NGTB20N120 and NGTB25N120 enable high performance power conversion solutions for a wide range of demanding applications, including induction cook tops, rice cookers and other small kitchen appliances.

Increasing energy prices and environmental concerns around carbon emissions are continuously driving demand for higher performance power discrete components; especially in high power inductive and inverter applications. These new 1200 V rated IGBTs utilize deep trench technology and state-of-the-art wafer thinning and processing techniques to enable very low turn-off losses while maintaining a low on-state voltage during turn-on, which results in lower switching and conduction losses. These devices are offered with a choice of 15 A, 20 A and 25 A current ratings and are co-packaged with a very low forward drop and soft-recovery fast rectifier to meet stringent customer requirements for high efficiency while providing a space efficient complete solution.

The TO-247 packaged Field Stop IGBT devices save board space and are optimized for very low on-state voltage drop and turn-off switching losses. The NGTB15N120IHLWG, NGTB20N120IHLWG, and NGTB25N120IHLWG inductive heating specific IGBTs are priced at $1.50, $1.80, and $2.00 per unit respectively, all in quantities of 2,500. The NGTB15N120LWG, NGTB20N120LWG, and NGTB25N120LWG motor drive specific IGBTs are priced at $1.75, $2.10, and $2.35 respectively, all in quantities of 2,500.

ON Semiconductor
Part Number: NGTB15N120

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