Super Junction MOSFETs with Ultra Low On-State Resistance

Aug. 20, 2012
Renesas Electronics Corporation announced the availability of three new super-junction MOSFETs.

Renesas Electronics Corporation announced the availability of three new super-junction metal-oxide-semiconductor field-effect-transistors (Super Junction MOSFETs) featuring figure of merit: on-state resistance x gate change in a 600 V power semiconductor device suitable for high-speed motor drives, DC-DC converters, and DC-AC inverter applications. This ultra low on-state resistance and low gate charge combination benchmark, combined with the fast body diode feature, allow the new RJL60S5DPP, RJL60S5DPK and RJL60S5DPE devices to contribute to improved power efficiency in home appliance motor drives, such as for air conditioners, that employ high-speed motors with inverterized control.

Renesas has achieved an on-state resistance of 150 mΩ (typical value) in a 600 V power semiconductor device along with a low gate charge. This enables improved power efficiency for applications such as home appliances that employ high-speed motors and inverterized control.

The new Super Junction MOSFET devices have built-in fast body diodes with specifications optimized for high-speed motor control applications. There is a significant reduction in the diodes' reverse recovery time to only 150 ns, about one third that of the diodes in similar-rated existing Super Junction MOSFET devices.

Renesas improved the gate drain capacitance by optimizing the surface configuration, thereby minimizing ringing, while preserving high-speed switching performance. This improvement contributes to reduced loss and stable operation, especially in three-phase bridge circuits, which are widely used in high-speed motor and inverter control applications.

The Super Junction MOSFET devices are available in configurations equivalent to the following industry-standard packages: TO-220FP (RJL60S5DPP), TO-3P (RJL60S5DPK), and LDPAK (RJL60S5DPE).

Samples of Renesas Electronics' new RJL60S5DPP, RJL60S5DPK, and RJL60S5DPE SJ- MOSFETs will be available in September 2012, priced at US$2.0 per unit. Mass production is scheduled to begin December 2012 and is expected to reach a combined volume of 500,000 units per month for all three products by March 2013. (Pricing and availability are subject to change without notice.)

Renesas Electronics America Inc.
Part Number: Super Junction

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