Radiation-Hardened MOS Switching Devices

Sept. 12, 2012
Infineon Technologies AG introduced its first power switching devices designed specifically for use in space and avionics applications.

Infineon Technologies AG introduced its first power switching devices designed specifically for use in space and avionics applications. The new Radiation Hardened (RH) PowerMOS devices of the BUY25CSXX family offer best-in-class performance to support design of energy-efficient power conditioning and power supply systems for space use. They combine Infineon's expertise in high-reliability transistors and in high-efficiency MOS switching devices. Infineon is the leading Europe-based supplier of radio frequency diodes and microwave transistors for satellite communications systems.

The RH PowerMOS technology is hardened against Total Ionizing Dose (TID) and Single Event Effects (SEE) to offer devices that meet requirements of the European Space Agency (ESA). The devices are fully qualified according to ESCC5000. Infineon is the only European supplier for 250 V RH PowerMOS devices that fulfill all ESA requirements.

Efficiency and reliability are critical parameters in space applications, where size and weight restrictions on all system components require the best possible performance matched with protection against damage from space-born radiation. Specifications of the RH PowerMOS family reflect these dual concerns, including:

Best-in-class RDS(ON) (20mΩ for 250V device in SMD2 package)

Withstands >100 kRad Total Ionizing Dose (TID) (up to 300kRad on request)

Single Event Effect (SEE) Hardened >LET55 MeVcm²/mg

Infineon has released two 250V (54A and 12.4A) and one 100V (12.4A) device in the RH PowerMOS family BUY25CSXX. The 12.4A devices are available in SMD05 packages and the 54A device is available in the SMD2 package. Devices for engineering modules as well as qualified devices for flight modules are in production and can be ordered from authorized Infineon distributors.

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