High Voltage IGBT Gate Drivers Meet Automotive Needs

Aug. 2, 2013
Infineon Technologies AG introduced its next generation of high-voltage IGBT gate drivers.

Infineon Technologies AG introduced its next generation of high-voltage IGBT gate drivers. Designed for the main inverter of hybrid and electric vehicles (HEV), the new EiceDRIVER™ SIL and the EiceDRIVER™ Boost drivers enable automotive system suppliers to more easily and more cost-effectively design HEV drivetrain subsystems that are compliant with ASIL C/D functional safety requirements (ISO 26262). Target applications of the new EiceDRIVERs are HEV inverters of up to 120 kW using 400 V, 600 V and 1200 V IGBTs. Early samples of the EiceDRIVER SIL and EiceDRIVER Boost are available with broad sampling planned as of December 2013.

The AECQ100 qualified EiceDRIVER SIL (1EDI2001AS) and EiceDRIVER Boost (1EBN1001AE) offer the perfect feature set to drive and control IGBTs in an automotive inverter. They provide galvanic isolation, bidirectional signal transmission, active short-circuit support and optimized IGBT switching capabilities. Implemented as a chipset, the two devices can save significant PCB area of up to 20 percent in the HEV subsystem compared to today's solutions. Also, the features implemented in the EiceDRIVER SIL and EiceDRIVER Boost reduce overall system level costs as they eliminate up to 60 discrete components needed in today's solutions.

The EiceDRIVER SIL (1EDI2001AS) is a high-voltage IGBT gate driver designed for automotive motor drives up to 120kW. EiceDRIVER SIL is based on the Coreless Transformer technology of Infineon, providing galvanic isolation between low-voltage and high-voltage domains. The EiceDRIVER SIL features a standard SPI interface for control and diagnosis, with transmission speed up to 2 Mbaud. A large spectrum of safety-related functions is implemented to support functional safety requirements at system level. These include over-current monitoring, runtime monitoring of all power supplies, oscillators, gate signals and output stage. A verification mode allows system-level diagnosis including error injection and weak turn-on. On the high-voltage side the EiceDRIVER SIL is dimensioned to drive an external booster stage. It comes in a PG-DSO-36 package.

The EiceDRIVER Boost (1EBN1001AE) is a single-channel IGBT booster fully compatible with the EiceDRIVER SIL. EiceDRIVER Boost is based on high-performance bipolar technology and replaces buffer stages based on discrete devices. Because of its thermally optimized exposed pad package, the EiceDRIVER Boost is able to drive and sink peak currents up to 15 A. This makes it suitable for most inverter systems in automotive applications. It features support for active short-circuits and for active clamping. The EiceDRIVER Boost is delivered in an exposed pad PG-DSO-14 package.

The EiceDRIVER SIL (1EDI2001AS) and the EiceDRIVER Boost (1EBN1001AE) can be used together with the Infineon HybridPACK™ IGBT modules to implement an optimized system for hybrid and electric vehicles.

Early engineering samples of the gate drivers EiceDRIVER SIL and EiceDRIVER Boost are available with broad sampling scheduled as of December 2013. Start of production is planned by end of 2014.

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