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50 V Trench MOS Barrier Schottky Rectifiers For Smartphone

Oct. 22, 2013
Vishay Intertechnology, Inc. introduced two new high current density 50 V TMBS® Trench MOS Barrier Schottky rectifiers.

Two high current density 50 V TMBS® Trench MOS Barrier Schottky rectifiers from Vishay Intertechnology, Inc. , the  V10PN50 and V15PN50, are reportedly the industry's first devices to combine low forward voltage drop down to 0.40 V typical at 10 A and 0.41 V typical at 15 A with optimized leakage current in the slim TO-277A (SMPC) package for smartphone and tablet charger applications.

With their extremely low forward voltage drops and profile of only 1.1 mm, the V10PN50 and V15PN50 rectifiers reduce power loss and improve efficiency in low-voltage, high-frequency DC/DC converters, freewheeling diodes, and polarity protection in space-constrained applications.

The new rectifiers feature a maximum operation junction temperature of +150 °C and an MSL moisture sensitivity level of 1, per J-STD-020, LF maximum peak of 260 °C. Ideal for automated placement, the devices are compliant to RoHS Directive 2011/65/EU and halogen-free according to JEDEC JS709A standards.

Samples and production quantities of the new 50 V V10PN50 and V15PN50 TMBS rectifiers are available now, with lead times of 18 weeks for larger orders. Pricing for U.S. delivery begins at $0.30 per piece in quantities below 10,000.

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