Powerelectronics 1992 3332advanced
Powerelectronics 1992 3332advanced
Powerelectronics 1992 3332advanced
Powerelectronics 1992 3332advanced
Powerelectronics 1992 3332advanced

Ultra-small P-channel Enhancement-Mode Power MOSFETs

Nov. 18, 2013
Advanced Power Electronics Corp. (USA) has launched a new P-channel Enhancement-mode Power MOSFET, the AP2325GEU6-HF-3, which is well-suited for use in applications such as load switches.

Advanced Power Electronics Corp. (USA) has launched a new P-channel Enhancement-mode Power MOSFET, the AP2325GEU6-HF-3, which is well-suited for use in applications such as load switches.

Combining fast switching, low on-resistance and cost-effectiveness, the AP2325GEU6-HF-3 is simple to use and has a low gate charge. It features a minimum Drain-Source Breakdown Voltage (BVDSS) of -20V, maximum RDS(ON) of 145mohms, and a maximum Continuous Drain Current (ID) at 25 °C of -1.8A.

These power MOSFETs are available in the popular RoHS/REACH-compliant, halogen-free SOT-363 ultra-small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required.

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