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Solderable and Sinterable Top Side Bonding for High Power IGBT Wafers

March 12, 2014
IXYS Corp. has introduced solderable or sinterable top side on 200 and 300 Amps, 650 Volt Trench XPTTM IGBT silicon dies.

IXYS Corporation has introduced solderable or sinterable top side on 200 and 300 Amps,  650 Volt Trench XPTTM IGBT silicon dies.

The top side solderable metallization improves the power cycling capabilities of power modules. Replacing the standard bond wire connections by using the standard soldering process improves the power cycling capability, and increases the surge current capabilities of these dies. The improved top metallization also enables the use of a sintering bonding process for these IGBTs, which provide a solderless structure, free of thermal fatigue and better thermal conductivity. Additionally, the top side soldering gives the benefit of top side cooling and better surface lateral high current flow uniformity, thus enabling higher power outputs with less "hot spots" and less "current hogging".

Introducing solderable top side Trench XPTTM IGBTs is a natural evolution for IXYS, since the top side soldering processes has been used for decades in the IXYS bipolar power module products.

These new IGBT products fit the high current applications for IGBTs in motor control, inverters, automotive and transportation, UPS, welding, and other high current Industrial applications.

First available products are the IX112T06M-AG, a 650V 200A Trench XPTTM IGBT, and the IX150T06M-AG, a 650V 300A Trench XPTTM IGBT. These new IGBT dies and also the counterpart Free Wheeling diodes based on SONIC technology are available in production quantities.

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