Infineon Technologies complements its portfolio of Reverse Conducting (RC) Soft Switching IGBT (Insulated Gate Bipolar Transistor) introducing a 1350V device with a monolithic integrated reverse conduction diode in 20A current class. The new 20A RC-H5 devices extend Infineon`s performance leadership of the RC-H family, focusing on system efficiency and demanding reliability requirements for Induction Cooking applications.
The new RC-H5 provides up to 30% reduction in switching losses compared to previous generations, allowing designers to use higher frequencies of up to 30kHz. Thus, the efficiency of the system with an RC-H5 device is improved by 0.5% leading to an overall performance of the system of more than 92%. Lowered overall system costs can also be realized by using smaller inductor choices with less copper. The RC-H5 discrete IGBT is based on the ground breaking technology of the RC-H3 which remains available for existing designs.
With the RC-H5, reliability has once again been improved by reducing power dissipation and a better thermal performance, even under higher ambient temperatures of up to 175°C. Additionally the turn-on spike current has been cut by 10% which leads to less stress on passive components in the system increasing reliability. Improved EMI behavior is an additional benefit. As a consequence there are less filtering requirements and lower system costs for the designers.
The RC-H5 family is available in a current class of 20A with 1200V and 1350V blocking voltage and is offered in a TO-247 package. The RC-H5 1350V 20A is ready for shipping whereas he RC-H5 1200V 20A will be available in Q2 2014. The availability of the ground breaking RC-H3 family will not be affected by the product launch of this next generation of reverse conducting IGBT.
